We have examined the wet etching of AlN and In(x)Al(1-x)N in KOH solutions as a function of crystal quality, etch temperature and composition. AlN samples prepared by reactive sputtering on Si substrates at -200 deg C were annealed at temperatures from 400 to 1100 deg C and as expected, the etch rate decreased with anneal temperature, indicating improved crystal quality. We found that InAlN on Si substrates had higher wet etch rates. Both AlN and InAlN samples had an increase in etch rate with etch temperature. the etch rate for the InAlN increased as the in composition increased from 0 to 36%, and then decreased to zero for InN. Finally the effect of doping concentration in InAlN samples of similar In concentration (-3%) was examined and much higher etch rates were observed for the heavily doped material at solution temperatures above 60 deg C.
Jorge Polentino
CI 19769972
EES
http://oai.dtic.mil/oai/oai?verb=getRecord&metadataPrefix=html&identifier=ADA360823
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