Nitride semiconductor laser device

1. A nitride semiconductor laser device, comprising:

a nitride semiconductor substrate;

a lower layer of nitride semiconductor grown overlying said nitride semiconductor substrate;

a light emitting layer of nitride semiconductor grown overlying said lower layer; and

an upper layer of nitride semiconductor grown overlying said light emitting layer, wherein said upper layer has a stripe of 1.9 μm to 3.0 μm in width, a distance between an upper surface of said light emitting layer and a bottom of said stripe is 0 μm to 0.2 μm, said light emitting layer includes a structure formed of a well layer and a barrier layer stacked alternately, and said nitride semiconductor laser device includes a Fabry-Perot resonator of 300 to 1000 μm in length.

2. The nitride semiconductor laser device of claim 1, wherein said stripe is a ridge-geometric stripe.

3. The nitride semiconductor laser device of claim 1, wherein said nitride semiconductor substrate has a main surface with a plane orientation corresponding to any plane selected from the group consisting of, {0001}, {11-20}, {1-102} and {1-100}.

4. The nitride semiconductor laser device of claim 3, wherein said nitride semiconductor substrate has an angle offset from said plane orientation by no more than two degrees.

5. The nitride semiconductor laser device of claim 1, wherein said Fabry-Perot resonator has a mirror end surface provided by {1-100} plane.

6. The nitride semiconductor laser device of claim 1, wherein said well layer is two to six well layers.

7. The nitride semiconductor laser device of claim 1, wherein said stripe is 1.9 to 2.5 μm in width.

8. The nitride semiconductor laser device of claim 1, wherein said light emitting layer has one of P an As added thereto.

9. The nitride semiconductor laser device of claim 1, wherein said lower layer includes a crack prevention layer containing In.

10. The nitride semiconductor laser device of claim 1, wherein said light emitting layer contains an impurity selected from the group consisting of Si, O, C, Ge, Zn, and Mg.

11. The nitride semiconductor laser device of claim 1, wherein said upper layer includes a carrier block layer containing Al.

http://www.patentstorm.us/patents/6891189/claims.html

Marcos Pinto D`derlee
C.I. 17862728
EES

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