martes, 9 de febrero de 2010

InN- Indium Nitride Electrical properties

 Basic Parameter

Wurtzite crystal structure
Mobility electrons ≤3200 cm2 V-1 s-1 300 K
Diffusion coefficient electrons <80 cm2 s-1 300 K
Electron thermal velocity 3.4 x 105 m s-1 300 K
Hole thermal velocity 9.0 x 104 m s-1 300 K
Radiative recombination coefficient 2.0 x 10-10 cm3 s-1. 300 K Zhou et al. (1995)
Conductivity σ 2 ÷3 Ω-1 cm-1 300 K ;
temperature coefficient of resistivity 3.7·10-3 K-1
at 200...300K for pressed powder
Juza et al. (1956);
Hovel & Cuomo (1972);
Trainor & Rose (1974)
Mobility electrons μn 250(50) cm2 V-1 s-1 300 K ; see also Electron mobility vs. temperature Hovel & Cuomo (1972)
20 cm2 V-1 s-1 Trainor & Rose (1974)
35 ... 50 cm2 V-1 s-1 Marasina et al. (1977)
Jorge L. Polentino U.
EES


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